ST(D,P,U)9N60M2 دیتاشیت

ST(D,P,U)9N60M2

مشخصات دیتاشیت

نام دیتاشیت ST(D,P,U)9N60M2
حجم فایل 823 کیلوبایت
نوع فایل pdf
تعداد صفحات 27

مشاهده دیتاشیت ST(D,P,U)9N60M2

دانلود دیتاشیت

سایر مستندات

STD9N60M2 27 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STD9N60M2
  • Power Dissipation (Pd): 60W
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Input Capacitance (Ciss@Vds): 320pF@100V
  • Continuous Drain Current (Id): 5.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 780mΩ@3A,10V
  • Package: TO-252
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II Plus
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: STD9N
  • detail: N-Channel 600V 5.5A (Tc) 60W (Tc) Surface Mount DPAK

محصولات مشابه